| 摘要 |
PURPOSE:To improve the breakdown strength of a vertical field-effect transistor. CONSTITUTION:A vertical field-effect transistor is characterized by that when a semiconductor region 9' of a conductivity type opposite to that of a drain region 7 is formed in the upper part of the region 7 and in parts directly under a gate pad part 101 and a gate finger part 102 for potential separation the region 9' is not electrically connected to any one of a gate 16, sources 15 and 17 and the region 7. The breakdown strength of the transistor is improved two times or higher compared with a conventional product and moreover, the parasitic capacitance of the transistor is reduced and the switching speed of the transistor is speeded up by about 30%. |
