| 摘要 |
PURPOSE:To obtain a high photoelectric conversion factor by coating an insulative film or a semi-insulative film on the front/reverse side of a genuine semiconductor substrate and also attaching an electrode of high work function on the front which radiates a light and an electrode of low work function on the reverse side respectively so that an MIS structure may be constituted. CONSTITUTION:Si2N4 films 6, 10 of 5-30Angstrom in thickness are coated on the front radiating a light and the reverse side as opposed to the former of a genuine semiconductor substrate 1. Then an electrode 12 of Pt, Au, Ti, Mo, Ta, W, etc. having a more than 4 eV of work function is attached on a film 6. At that time, in order to allow penetration of a light 8, the average film thickness of the electrode 12 is 5- 300Angstrom On some part, a ''pullout''-type electrode 7 is installed. In addition, on the film 10 on the reverse side as opposed to the electrode 12, an electrode 11 of Al, Be, Mg, Ba, etc. having a low work function of less than 4eV is attached as a photoelectric conversion device of MIS structure. Thus, it is possible to prevent a rebonding in the film 10 surface of numerous carriers generated and improve the coversion efficiency. |
