| 摘要 |
A method for forming in a short time master-slice integrated circuits of high reliability, which circuits comprise diffusion layers and polysilicon layers which form transistor elements, and a plurality of metal wiring layers formed for realizing desired circuits, with insulating layers interposed between every adjacent two of the wiring layers. The methods comprises a first wiring process in which a master slice is provided by forming a predetermined number of metal layers in a wafer, and a second wiring process in which further metal wiring layers, to be customized so as to have logical functions required by a user, are formed on the first-mentioned metal wiring layers. The inner-most metal wiring layer of all the metal layers is used as wide power source line which is almost free from electro or stress migration.
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