| 摘要 |
PURPOSE:To effectively partly remove a semiconductor film by a laser without damaging other film by irradiating it with a laser light having a wavelength in which an optical absorption factor of a transparent conductive film is suffi ciently lower than that to the semiconductor film to remove an unnecessary part of the semiconductor film, and exposing part of the conductive film. CONSTITUTION:In steps of manufacturing this optical semiconductor device, an entire surface of a substrate 10 including transparent conductive films 11a, 11b, 11c..., is coated with an amorphous silicon film 12 of 5000-7000Angstrom of thickness. Then, an adjacent interval 12' is removed by irradiating with a laser light to isolate individual amorphous silicon films 12a, 12b, 12c,.... The used laser suitably has 0.51mum of a wavelength, 2X10<3>W/cm<2> of an output, and CW Ar laser. The absorption factor of the wavelength of the light to the conductive film is extremely lower than that to the film 12. As a result, even if the conductive film part 110 is temporarily directly irradiated with the light, the part is hardly damaged. |
