| 发明名称 |
PLASMA ETCHING INDIUM TIN OXIDE |
| 摘要 |
ITO is etched by a plasma containing CH3. and Ar+. Argon ions cause a significant increase in the etch rate.
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| 申请公布号 |
US5171401(A) |
申请公布日期 |
1992.12.15 |
| 申请号 |
US19900533232 |
申请日期 |
1990.06.04 |
| 申请人 |
EASTMAN KODAK COMPANY |
发明人 |
ROSELLE, PAUL L. |
| 分类号 |
H01L21/302;H01L21/3065;H01L27/14;H01L31/18 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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