| 摘要 |
PURPOSE:To form an Al wiring layer with good reproducibility by changing a temperature to heat a semiconductor substrate by at least two steps and by forming a film for each step when forming a film by depositing aluminum or aluminum alloy on the semiconductor substrate. CONSTITUTION:A wiring layers 13 to 15 which consist of Al alloy whereto Si is added by 1% are formed one by one on a surface of a silicon oxide film 12 on a semiconductor substrate 11. Film thickness of each of the Al wiring layers 13 to 15 is made 300Angstrom . Since heating temperatures of the semiconductor substrate 11 are different, all the crystal grain sizes of the Al wiring layers 13 to 15 are different. Since a heating temperature of a first layer of Al wiring layer 13 is 200 deg.C, the lowest, its crystal grain is the smallest. Since a heating temperature of a second layer of Al wiring layer 14 is as high as 400 deg.C, its crystal grain is larger than that of the Al wiring 13. Since a third layer of Al wiring layer 15 is heated to 500 deg.C, the highest, its crystal grain is the largest. |
