| 摘要 |
PURPOSE:To provide a semiconductor device wherein the deterioration of the bonding part between a bonding wire and a bonding pad is small under high- temperature surroundings. CONSTITUTION:An oxide is dispersed to the bonding interface between a bonding wire and a bonding pad. Even at high temperatures, it is possible to restrain the growth of an intermetallic compound of respective constituent metals at the bonding interface between the bonding wire and the bonding pad. Consequently, it is possible to prevent a drop in the bonding strength between the bonding wire and the bonding pad due to the growth of the intermetallic compound and to prevent the exfoliation of the bonding wire after long-term usage. It is possible to make the life of a semiconductor device long. |
