| 摘要 |
PURPOSE:To obtain the high-tension resistance for the subject semiconductor device by a method wherein a junction surface is provided in such a manner that one of layers is annually surrounding the other layer, a main junction surface is formed by performing a mesa etching on one of the layers in such way that the edge of the junction surface of the other layer is located on the mesa-side circumferential surface. CONSTITUTION:The P<+> layer 41 of an N type substrate 2 is projected by performing a mesa etching, the junction end of a P<+> layer 42 is extended to a mesa- side surface 5 and it is annularly surrounding the outside of the layer 41. The edge of the main junction surface 11 and the edge of an auxiliary junction surface 12 are covered by a protective film 3. When an inverse voltage is applied, a depletion layer width xd(V) is generated, and when a depletion layer 61 is enlarged to the lateral direction and reaches to the P<+> layer 42, a floating potential is induced on the layer 42, a new depletion layer 62 is generated on the peripheral section of the auxiliary junction surface 12, and a depletion layer width xd(L) is generated by the composition of the above two depletion layers, thereby enabling to weaken the surface field strength and to increase the breakdown voltage. |
