发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION AND PRODUCTION OF RESIST PATTERN
摘要 PURPOSE:To obtain the positive type photoresist compsn. which is suitable for ultrafine working and has high heat resistance by incorporating an alkaline- soluble resin and specific compds. into this compsn. CONSTITUTION:This compsn. contains the alkaline-soluble resin and one or >=2 kinds of the compds. expressed by formula I. The resist patterns are produced by applying this positive type photoresist compsn. on a substrate and exposing and developing the compsn. In the formula, m denotes 1 to 3 integer; n denotes 1 to 3 integer; D1 to D3 denotes a hydrogen atom, naphthoquinone-1,2- diadize-5-sulfonyl group, naphthoquinone-1, 2-diazide-4-sulfonyl group; D1 to D3 may be the same or different; R1 denotes a hydrogen atom, halogen atom, alkyl group. The compds. expressed by the formula I are obtd. by bringing, for example, a polyhydroxy compd. and naphthoquinone diazide sulfonyl halides into condensation reaction in the presence of a basic catalyst by using a reaction solvent.
申请公布号 JPH04360146(A) 申请公布日期 1992.12.14
申请号 JP19910136340 申请日期 1991.06.07
申请人 HITACHI CHEM CO LTD 发明人 NUNOMURA MASATAKA;HASHIMOTO MICHIAKI;KASUYA KEI;KOIBUCHI SHIGERU
分类号 G03F7/022;H01L21/027 主分类号 G03F7/022
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