| 摘要 |
PURPOSE:To eliminate germanium from an Al.Ge alloy film formed in a semiconductor device, reduce contact resistance, and improve resistance to electromigration. CONSTITUTION:In a first process, a metal film, e.g. copper film 16 which forms compound with germanium is formed on the upper surface of an Al.Ge alloy film formed on a substrate 11. After the first process, a second process is performed as follows; the substrate 11 on which the copper film 16 is formed is heat-treated, germanium in the Al.Ge alloy film 14 is made to react with the copper film 16, and compound of germanium and the copper film 16 is formed on the Al.Ge alloy film 14, thereby eliminating germanium from the Al.Ge alloy film 14.
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