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发明名称
GROWTH METHOD OF POLYCRYSTALLINE SILICON
摘要
申请公布号
JPH04360521(A)
申请公布日期
1992.12.14
申请号
JP19910136372
申请日期
1991.06.07
申请人
NEC CORP
发明人
NAKATANI TSUNEJI
分类号
H01L21/205
主分类号
H01L21/205
代理机构
代理人
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HIGH EFFECIENCY THROTTLE CRYOGENIC REFRIGERATOR BASED ON ONE STAGE COMPRESSOR
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