MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To exclude the etching of 3 semiconductor substrate, and reduce stress. CONSTITUTION:When a polysilicon layer which is formed on a semiconductor substrate 3 like DRAM and NVDRAM and has direct contact is formed, side walls 14 are formed in a two-layered structure of an SiN film 6 and an SiO2 film, and then the direct contact is formed in a self-alignment manner. Damage of the semiconductor substrate is avoided and junction leak can be prevented.