| 摘要 |
PURPOSE:To facilitate the formation of patterns of fine element regions and the complete removal of the resist of element sepn. regions by setting the exposure of the element sepn. regions larger than the exposure of the element regions. CONSTITUTION:The light transmittance of the mask parts corresponding to the element sepn. regions is set larger than the transmittance of the mask parts corresponding to the element regions. For example, this mask has a quartz substrate 31, the element region patterns 32 formed of chromium, and antireflection films 33 provided on the element sepn. regions. About 3.6% reflection is generated by a difference in the refractive index between the quartz substrate 31 and air in the light transmission parts 35 of the element regions 34 of such mask. Nearly 100% transmittance is obtd. by the antireflection films 33 in the element sepn. regions as against the above. Then, the exposure of 1.04 times the exposure of the element regions 34 is obtd. in the element sepn. regions. |
