| 摘要 |
PURPOSE:To facilitate the formation of resist patterns having a high aspect ratio even if a light source for lithography which is available at a low cost is used particularly in an LIGA method. CONSTITUTION:Resist patterns are formed by forming the porous resist layer in the method of forming the resist patterns by using the lithography as the resist layer formed on a substrate. If the resist layer is formed porous to lower densities, the resist layer can be baked by absorbing the light from the light source for lithography more deeply into the resist layer at the energy of the same intensity than in the case of the resist layer which is not made porous. |
