| 摘要 |
PURPOSE:To improve the oxidation resistance of a semiconductor storage device by improving the shape of a stack type capacitance element at the side face section of a lower electrode so that the step coverage of the dielectric film of a capacitor can be improved. CONSTITUTION:A polycrystalline silicon film 11 is grown by doping the film 11 with impurities after patterning the film 11 and side walls 8 are formed by performing anisotropic dry etching on the entire surface of the film 11. Therefore, the step coverage at the side face section of a lower electrode is improved and the thickness of the dielectric film 9 of a capacitor can be reduced. In addition, the capacitance of the capacitor can be increased. |
