发明名称 THIN FILM TRANSISTOR
摘要 PURPOSE:To prevent an increase in an OFF current due to back light at the time of using a thin film transistor having electrodes of a comblike structure, as a pixel switch of a liquid crystal display without complicated structure. CONSTITUTION:In a thin film transistor having a gate electrode 2 formed on an insulating board 1, a gate insulating film 3, a semiconductor layer 4, and source, drain electrodes made of ohmic layer 5 and metal layer 6 of a comblike structure, the comb teeth of the source/drain electrode do not cross the electrode 2, and the teeth edges are disposed on the electrode 2. Even if an electric resistance of the semiconductor layer except the gate electrode is reduced due to back light, if the edges of the teeth of the source/drain electrodes are disposed on the gate electrode, a leakage current at the time of OFF is not increased.
申请公布号 JPH04360583(A) 申请公布日期 1992.12.14
申请号 JP19910163612 申请日期 1991.06.07
申请人 NIPPON STEEL CORP 发明人 OTA YASUMITSU;MIMURA SHUSUKE;KITAMURA KOICHI;KATSUNO MASAKAZU;FUTAKI TOSHIROU;OTANI NOBORU
分类号 G02F1/136;G02F1/1368;H01L29/78;H01L29/786 主分类号 G02F1/136
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