| 摘要 |
PURPOSE:To prevent the generation of undesired unevenness on the formation surface of an amorphous silicon layer which is crystallized afterward, and manufacture a photovoltaic device provided with polycrystalline silicon of high quality. CONSTITUTION:The following are provided; a process for forming an amorphous silicon layer 2 on a substarte 1, and a process wherein, after silicon nitride or silicon oxide 3 is dispersed and arranged on the amorphous silicon layer 2, said layer 2 is crystallized by heat treatment, and a polycrystalline silicon layer 4 is formed. |
