| 摘要 |
<p>PURPOSE:To facilitate the measurement of ON electric current of a memory cell. CONSTITUTION:A transistor Q1 forming a current mirror circuit is provided together with a transistor Q12 becoming an electric current path of a memory cell of a sense amplifier 1 by connecting the one terminal to an output terminal To. When a high voltage Vmc outside a voltage range of an output control signal is applied on an output control signal terminal Toe, a high voltage detection circuit 3 generating a detection signal Det becoming an active level is provided. A transistor Q2 turned ON when a detection signal Det is at an active level is provided. An output buffer circuit 2 makes the output terminal high impedance when a high voltage Vmc is applied.</p> |
