REDUNDANT CIRCUIT FOR SEMICONDUCTOR MEMORY,申请号JP19910133027-传众专利搜索

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发明名称	REDUNDANT CIRCUIT FOR SEMICONDUCTOR MEMORY
摘要
申请公布号	JPH04358400(A)	申请公布日期	1992.12.11
申请号	JP19910133027	申请日期	1991.06.04
申请人	TOSHIBA CORP	发明人	ATSUMI SHIGERU
分类号	G11C29/00;G11C29/04;H01L21/82;H01L27/10	主分类号	G11C29/00
代理机构		代理人
主权项
地址

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