| 摘要 |
PURPOSE:To obtain a semiconductor light-emitting element which can emit light (oscillate) with a light-emitting wavelength ranging from blue color to an ultraviolet region by turning a specific chalcopyrite type compound into p type by undoping and then into n type by Zn or Cd doping. CONSTITUTION:An n-type GaAs substrate 1 is heated and then an n-type (Cu0.89 Ag0.11)AlSe2 layer 2 is grown with Cu, Ag, Al, and Se as source materials. In this case, Zn is deped for turning into n-type. Then, a p-type (Cu0.89Ag<0.11>) AlSe2 layer 3 is allowed to grow with Cu, Ag, Al, and Se as source materials by undoping. Then, an In-Ga electrode 4 as a p-type electrode and an Au-Ge electrode 5 as an n-type electrode are formed, thus obtaining a semiconductor light-emitting element with a light-emitting wavelength ranging from blue color to an ultraviolet region. |
