| 摘要 |
PURPOSE: To form a Schottky barrier diode clamp type transistor while, across a collector/base junction of a bipolar transistor, positioned in parallel, to form a Schottky diode as a part of an overall process for manufacturing an integrated circuit. CONSTITUTION: A schottky diode 4 comprising a true polysilicon layer 30 for separating a metal solicide layer 48 from an N conduction type active region 16a, is formed. The configuration, avoiding necessity for a process step where a window is opened on a true polysilicon layer, requires less surface area part, compared to a conventional device, required for forming a Schottky diode. |
