| 摘要 |
<p>An amplifier (360) of the present invention is suitable for use as a sense amplifier in a semiconductor memory device. The amplifier has P-channel transistors (430, 432) connected between first and second nodes (440, 442) of the amplifier (210, 212, 214 and 216) and respective bit lines (360a, 360b). A precharge circuit (410, 420 and 422) is provided for precharging the two nodes to VCC before a read operation. The precharge circuit includes an equalizing transistor (450) connected to the nodes for providing an additional precharge of the nodes thereby increasing precharge operations and increasing sensing speed.</p> |
