发明名称 MANUFACTURE OF THIN-FILM TRANSISTOR ARRAY
摘要 <p>PURPOSE:To measure and evaluate the shortcircuit current of a gate electrode and a source electrode, without causing another shortcircuit defect between the gate electrode and the source electrode. CONSTITUTION:Thin-film transistors are manufactured with their gate electrode wirings 4 and source electrodes G or drain electrodes all connected, and parts 8 of the connection wirings are removed after that to isolate electrically.</p>
申请公布号 JPH04356959(A) 申请公布日期 1992.12.10
申请号 JP19910130910 申请日期 1991.06.03
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 OKAFUJI MICHIKO;TAKEDA YOSHIYA
分类号 G02F1/1343;G02F1/136;G02F1/1368;H01L27/12;H01L29/78;H01L29/786 主分类号 G02F1/1343
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