| 摘要 |
The method for three-dimensionally stacking a single stacked capacitor to maximize the size of the DRAM capacitor comprises the steps of growing a first insulation film (301) onto a substrate having a field oxide film (103) and a transistor structure, forming a source connection region (108) at a source region of the transistor to form a first storage electrode (305) connected to the region (108), forming a dielectric film (307) on the electrode (305), depositing a first plate electrode (309) on the whole surface of the substrate except a portion (401) of the electrode (305), depositing an oxide film (403) thereon to form a contact hole into the portion (401) by etching-back the oxide film, forming a second storage electrode (405) coupled to the electrode (405), forming a dielectric film (407) on the electrode (405) to form a second plate electrode (411) on the whole substrate except a portion (409) of the electrode (405), and depositing an oxide film (413) on the whole substrate.
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