| 摘要 |
PURPOSE:To provide a method for manufacturing semiconductor quantum fine wirings to be applied for a quantum fine wiring laser having an ultrahigh efficiency or a quantum fine wiring transistor, in which widths of wirings are easily made uniform by enhancing a density of the fine wirings and accurate control of the widths of the wirings. CONSTITUTION:A first step of depositing an insulating film 10 on a surface B of a compound semiconductor substrate 9 (111) and forming a stripelike opening of a direction {112}, and a second step of multilayer-growing at least two or more types of semiconductors 2, 3 having surfaces (110) on sidewalls on the surface B (111) of the substrate 9 by using an organic metal vapor growing method, are provided. A method for manufacturing semiconductor quantum fine wirings 6 comprising a third step of selectively etching the side face of a multilayer structure, and a fourth step of selectively sequentially growing at least two or more types of the semiconductors 2, 4, 5, 6 in a direction of the side face (110) by using a growing condition of no growth on the surface B (111), is provided. |
