| 摘要 |
PURPOSE:To upgrade the operating function of a semiconductor device and to contrive the simplification of the constitution and the cutdown in the cost in the apparatuses to be applied by forming the device in a construction capable of controlling the current to flow in the input part by the device itself. CONSTITUTION:Input parts 3a and 3b and output parts 4a and 4b are alternately provided on each cross end part of the active layer 2. These input parts 3a and 3b and output parts 4a and 4b are each to be used as an ohmic contact part and a mixture of a Au-Ge alloy and Ni is normally used for these input and output parts. Moreover, a current correcting part 5, which is an ohmic contact part for uniformizing the current to flow in the input part 3a, and a gate 6 for controlling the current to flow in the input part 3a are provided in the vicinity of the above input part 3a on the active layer 2. This gate 6 is formed of a metal-semiconductor contact diode when the active layer 2 consists of GaAs. Thus, there is no need to provide separately a controlling circuit in the semiconductor device and the constant-current operation and the switching operation can be executed by the device itself. |
