| 摘要 |
PURPOSE:To enable precise patterning due to constant anisotropy etching by forming etchant decomposing etching gas adhered to the surface of a material layer to be etched by photochemical reaction. CONSTITUTION:The substrate 20 of a material to be etched is set on a cooler 19 which is exposed in a reaction chamber 14. The residual gas is vaccum-exhausted. The substrate 20 is cooled. The temperature of the substrate 20 is lowered to approx. 63 deg.K. Then, chlorine which is an etching gas is introduced into the reaction chamber 14 and ultra-violet rays from an excimer laser light generator 11 is irradiated on the substrate 20 of material to be etched. On the surface irradiated by the light of the substrate 20 of material to be etched, anisotropy etching of polycrystalline silicon is formed. By driving an X-Y stage 18, selective etching on all the surfaces of the substrate 20 of material to be etched is also possible. |
