SCHALTUNGSANORDNUNG ZUM SCHUTZ GEGEN UEBERSPANNUNGEN AN EINGAENGEN INTEGRIERTER MOS-SCHALTKREISE

摘要

In a circuit, thick oxide-layer transistors (1) link input connections (PAD) to a reference potential (VSS), additional thick oxide-layer transistors (3) link the input connections (PAD) to a supply voltage (VDD) and thin oxide-layer transistors (2) lik the inputs (IN) of an integrated MOS circuit to the reference potential (VSS), all links between the input connections (PAD) and the inputs (IN) of the integrated MOS circuit being provided each with at least one protective resistance (R). Also disclosed is a circuit, in which additional thin oxide-layer transistors (4) are arranged between the inputs of the integrated MOS circuit and the supply voltage (VDD) and/or the links between the input connection (PAD) and the inputs (IN) of the integrated MOS circuit are formed by a serial connection between a protective resistance (R) and a coupling MOS transistor (5).