| 摘要 |
PURPOSE:To enable a solar cell to be enhanced in photoelectric conversion efficiency by a method wherein a single-crystal semiconductor layer provided with at least one of irregularities is formed on the first substrate, a photoelectric conversion element is formed taking advantage of the single crystal semiconductor layer, and the photoelectric conversion element is jointed to a second substrate. CONSTITUTION:A stainless steel plate is pasted on a single-crystal layer through the intermediary of a conductive adhesive agent, which is formed into a V-shaped groove substrate 103 of structure which has a light trapping effect, and the laminate concerned is dipped into a hydrogen fluoride solution making the substrate 103 face downward till a first conductivity type single-crystal layer 201 is submerged in the solution. Giving ultrasonic vibrations, the layer 201 is separated from the V-shaped groove substrate 103, and an object left on a stainless steel support side is cleaned with running water. Then, a transparent electrode 301 of SnO2/ITO is evaporated on the surface of the dried layer 201. Lastly, a collector electrode 301 is formed on the transparent electrode 301 through a printing method where conductive paste containing Ag powder is printed and burned, whereby a thin-film single-crystal silicon solar cell can be obtained. |
