| 摘要 |
<p>An isothermal capacitance transient spectroscopy capable of surely detecting impurities of low concentration and thus achieving a highly accurate measurement is provided. In said isothermal capacitance transient spectroscopy, in which a pulse voltage having an appointed magnitude is applied to a semiconductor sample held at a constant temperature to analyze a capacitance-change after that of said semiconductor sample, whereby measuring impurities and the like contained in the semiconductor sample, a differential coefficient <MATH> obtained by differentiating an expression (K(t)) defined by the following expression (1) is used as an ICTS spectrum: <MATH> In addition, a differential coefficient obtained by differentiating an expression defined by an expression (2), (3) and (4), respectively, in place of said expression (1) may be used as said ICTS spectrum. <MATH> <IMAGE></p> |
