| 摘要 |
<p>PURPOSE:To improve the S/N of pattern images by combining Cr pattern level differences and insulating films for phase shift according to exposing wavelengths, thereby forming the phase shift mask. CONSTITUTION:The mask 1 for phase shift has the phase shift patterns 4 of SiN having the difference T(=D2-D) between the film thickness D2 at Cr pattern edges 4a and the film thickness of light transparent parts and having 2 refractive index (n) on a glass substrate 3 having the Cr patterns 2 of a thickness D1 at equal intervals. Namely, the film thickness at the edges of the Cr patterns increases according to the level differences of the Cr patterns 2 of the mask 1 and the film thickness difference with the transparent parts 5 of the mask 1 becomes the function of the wavelength with the refractive index n=2. T=lambda/2(n-1). This film thickness difference induces the interference of the phase of the light when the mask is irradiated with light 5 from the glass substrate 3 side. The exposing intensity is then 0 in calculation at the Cr mask edges. The clear pattern images are thus formed.</p> |
