| 摘要 |
PURPOSE:To provide a forming method of a T-type gate electrode never causing a displacement between a lower layer gate part and an upper layer gate part with less process number in the manufacture of a semiconductor device for forming the T-type gate electrode. CONSTITUTION:A mask in which a 180 deg.-phase shifter material 4 and a dimming film 5 for reducing the transmitted quantity of light, and a 90 deg.-phase shifter material for suppressing the edge effect of a shifter material are disposed on a glass material 3 is used, and by utilizing the part having a zero luminous intensity generated in the edge part of the 180 deg.-phase shifter material 4 and the part reduced in luminous intensity caused at the time of transmitting the dimming film 5 are utilized, whereby a resist 2 on a substrate 1 is worked into a pattern having a cut pattern to give a T-shaped section by exposure and development, and a T-shaped gate electrode 7 is formed by use of this. |
