| 摘要 |
PURPOSE:To form the inclined patterns of various types of pattern sizes by a method wherein the position of implantation of an ion beam is changed, the implantation of ion beam is conducted by changing at least one of accelerated voltage, atomic species of ions and the valence member of ions, and a dry etching is performed on the ion implanting part of etching material. CONSTITUTION:A SiN2 film 12 is formed on a GaAs substrate 11 by a plasma CVD device, and focussed Ga ions 13 are implanted to the above-mentioned SiN2 film 12 by a FIB device. In order to form a stepped pattern, the position of injection is shifted, and an ion implantation operation is conducted by changing accelerated voltage. When the accelerated voltage is changed, there is a peak in a shallow part of the profile in depth direction of ion concentration at low acceleration, and the peak is located in the deep part in high acceleration. As a result, the peak position of ion concentration of the ion implanted part 12a becomes stepped depth distribution. Then, the SiN2 film 12 is dry-etched by the radical 14 of CF4 gas. |
