| 摘要 |
PURPOSE:To obtain a preferable high frequency characteristics in a field effect transistor by forming source and drain electrodes making contact with N type GaAs operation layer through a groove reaching the N type operation layer at the bottom of V-shape in cross section on a GaAlAs layer, thereby shortening the effective gate length. CONSTITUTION:N type GaAs operation layer 7 is epitaxially grown, for example, with a thickness of 0.6mum and 1X10<17>cm<-3> of carrier density on a semi-insulating GaAs substrate 6. Then, N type GaAlAs layer 8 is epitaxially grown, for example, with a thickness of 0.6mum and 1l10<15>cm<-3> of carrier density on the layer 7. Then, with a photoresist 9 as a mask the layer 8 is etched, thereby forming a V-shaped groove 10 reaching the layer 7 at the bottom and exposing the operation layer 11. Subsequently, Schottky gate metal, such as, for example, Al, Ti or the like is evaporated in multilayer on the entire surface of the wafer. Then, the resist 9 is removed, and a gate electrode 13 is formed thereon by shift off. In this case, the effective gate length between the layer 7 and the electrode 13 is formed to approx. 0.3mum in the junction. Then, the source 14 and drain 15 are formed for electrodes. |
