发明名称 |
Bipolar fabrication method. |
摘要 |
<p>A method for forming a bipolar transistor is disclosed. An optional thin screen oxide (e.g., 13) ( APPROX 150 ANGSTROM ) may be formed upon a substrate over an already-defined collector region (e.g., 11). A BF2 or other implantation (e.g., 17) is performed through the screen oxide (e.g., 13) to create the base. The screen oxide (e.g., 13) is removed and replaced with a patterned high pressure oxide (e.g., 15) so that the emitter may be defined. The resulting device has a more controllable Gummel number and breakdown voltage. <IMAGE></p> |
申请公布号 |
EP0517438(A2) |
申请公布日期 |
1992.12.09 |
申请号 |
EP19920304894 |
申请日期 |
1992.05.29 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
HAM, THOMAS EDWARD;OSENBACH, JOHN WILLIAM;THOMA, MORGAN JONES;VITKAVAGE, SUSAN CLAY |
分类号 |
H01L29/73;H01L21/331;H01L21/8228;H01L29/10 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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