Method for the preparation of epitaxial ferromagnetic manganese aluminum magnetic memory element
摘要
A non-volatile memory element based upon a thin epitaxial film of manganese aluminum upon a III-V semiconductor is described. The film is stable at elevated temperatures required for III-V semiconductor device processing, so permitting the monolithic integration of non-volatile memory elements with III-V semiconductor electronic and photonic devices.
申请公布号
US5169485(A)
申请公布日期
1992.12.08
申请号
US19910665665
申请日期
1991.03.07
申请人
BELL COMMUNICATIONS RESEARCH, INC.
发明人
ALLEN, JR., SILAS J.;HARBISON, JAMES P.;LEADBEATER, MARK L.;RAMESH, RAMAMOORTHY;SANDS, TIMOTHY D.