发明名称 Electroless deposition for IC fabrication
摘要 Electroless deposition of a conducting material on an underlying conductive region is used in a fabrication of a semiconductor device. Electroless deposition provides a selective and an additive process for forming conductive layers, filling window and providing interconnections and terminals. The conducting material is selectively deposited on a catalytic underlying surface. When the underlying surface is not catalytic, an activation step is used to cause the surface to be catalytic. Where the base underlying surface is a substrate, a contact region is formed on the substrate for electroless deposition of the conducting material.
申请公布号 US5169680(A) 申请公布日期 1992.12.08
申请号 US19920850251 申请日期 1992.03.11
申请人 INTEL CORPORATION 发明人 TING, CHIU H.;PAUNOVIC, MILAN
分类号 H01L21/288;H01L21/768 主分类号 H01L21/288
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