| 摘要 |
A method to anisotropically etch an oxide/silicide/poly sandwich structure on a silicon wafer substrate in situ, that is, using a single parallel plate plasma reactor chamber and a single inert cathode, with a variable gap between cathode and anode. This method has an oxide etch step and a silicide/poly etch step, both of which are performed as plasma etch steps. The process allows a continuous etch to be applied without removing the wafer from the plasma reactor chamber. The fully etched sandwich structure has a vertical profile at or near 90 DEG from horizontal, with no bowing or notching.
|
