| 摘要 |
PURPOSE:To provide a semiconductor memory device which is highly resistant to oxidation, heat and chemicals and is provided with a lower capacitor electrode which enables highly selective etching to a layer insulating film which becomes a foundation and a manufacture method thereof. CONSTITUTION:A contact hole 25b is provided to a layer insulating film 30 covering all over a semiconductor substrate 21 and a polysilicon layer containing impurities is deposited thereon to nitrify a surface thereof directly. Thereby, a lower capacitor electrode 27 having a directly nitrified silicon film 27a on a surface is formed. |
