发明名称 |
Control of crystallite size in diamond film chemical vapor deposition |
摘要 |
In depositing an adhering, continuous, polycrystalline diamond film of optical or semiconductor quality on a substrate, as by forming on the substrate a layer of a refractory nitride interlayer and depositing diamond on the interlayer without mechanical treatment or seeding of the substrate or the interlayer, the substrate is heated in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon, and the size of deposited diamond crystallites and their rate of deposition selectively varied by a bias voltage applied to the substrate.
|
申请公布号 |
US5169676(A) |
申请公布日期 |
1992.12.08 |
申请号 |
US19910702663 |
申请日期 |
1991.05.16 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY |
发明人 |
MORAN, MARK B.;JOHNSON, LINDA F.;KLEMM, KARL A. |
分类号 |
C23C16/27;C23C16/511;C23C16/52;C30B25/02;C30B25/10 |
主分类号 |
C23C16/27 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|