发明名称 |
Method of manufacturing step cut type insulated gate SIT having low-resistance electrode |
摘要 |
This invention provides a step cut type insulated gate static induction transistor having a first main electrode formed in one major surface of a semiconductor substrate, a second main electrode formed in a bottom portion of a U-shaped groove formed in one major surface of a semiconductor substrate, a control electrode formed on a side wall of the U-shaped groove and consisting of a thin insulating film and a polysilicon layer, and a low-resistance electrode of a refractory metal layer or a refractory metal silicide layer formed in at least part of the side wall of the polysilicon layer of the control electrode.
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申请公布号 |
US5169795(A) |
申请公布日期 |
1992.12.08 |
申请号 |
US19910747699 |
申请日期 |
1991.08.20 |
申请人 |
SMALL POWER COMMUNICATION SYSTEMS RESEARCH LABORATORIES CO., LTD. |
发明人 |
NISHIZAWA, JUN-ICHI;TAKEDA, NOBUO |
分类号 |
H01L21/28;H01L21/335;H01L21/60;H01L29/49;H01L29/772;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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