| 摘要 |
PURPOSE:To increase the capacitor capacity of a stacked capacitor in a semiconductor memory device. CONSTITUTION:A semiconductor memory device is constituted of the following: a switching element Tr; and a stacked capacitor C2 which is composed of a storage node electrode 23 and a counter electrode 25 which are connected to the switching element Tr and which are formed so as to be extended on adjacent word lines 9a and 9b. In the memory device, a groove 22 is formed in a junction part generated when the storage node electrode 23 is formed so as to correspond to both word lines 9a and 9b of the storage node electrode 23, the surface area of the storage node electrode 23 is increased, and the counter electrode 25 is formed along the groove 22. |
