发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To reduce electromagnetic effect on other electronic device near the electronic device using this semiconductor device, by a method wherein the energies of electromagnetic waves, which are emitted by power-source current including high-frequency components and flowing in a semiconductor chip and by power-source current including high-frequency components and flowing out from the chip, are reduced. CONSTITUTION:A lead 3 for power supply use and a lead 4 for grounding use are arranged in such a way that a power-supply current, which flows in a semiconductor chip 1 through the lead 3 for power supply use and for supplying a supply voltage to the chip 1, and a power-supply current, which flows out from the chip 1 through the lead 4 for grounding use and for supplying an earth voltage to the chip 1, are made to flow in inverse-parallel to each other.</p>
申请公布号 JPH04352334(A) 申请公布日期 1992.12.07
申请号 JP19910126033 申请日期 1991.05.29
申请人 MATSUSHITA ELECTRON CORP 发明人 HAMAGUCHI YOSHINAGA
分类号 H01L21/60 主分类号 H01L21/60
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