METHOD FOR REMOVING RESIST

摘要

PURPOSE:To safely remove a resist in a process for producing a semiconductor device and to enable the production of a semiconductor device having excellent reliability. CONSTITUTION:When a large dose of ions of an impurity is implanted into a semiconductor wafer 11 with a far UV curing resist 12 selectively set on the surface, the resist 12 is previously and uniformly hardened by irradiation with far UV rays and baking. After the ion implantation, the resist 12 is ashed and removed by a reaction with O2 plasma generated by microwave excitation under 2-5Torr pressure.