发明名称 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURE THEREOF
摘要 PURPOSE:To provide a word-line constitution wherein a word line can easily be microworked and to provide its manufacturing method. CONSTITUTION:A word line in memory cell array parts 2i,... is formed in such a way that a silicon dioxide film 3 is sandwiched between a main word line Wi and subword lines Wij,... which are composed of a tungsten silicide film which is microworked easily. The signal of the main word line is amplified in a part other than the memory cell array parts and transmitted to the subword lines. A laminated film by the tungsten silicide film and the silicon dioxide film in the memory cell array parts is worked simultaneously to the shape of the word line.
申请公布号 JPH04352360(A) 申请公布日期 1992.12.07
申请号 JP19910125762 申请日期 1991.05.29
申请人 NEC CORP 发明人 TERADA KAZUO
分类号 G11C11/407;H01L21/28;H01L21/3205;H01L21/8242;H01L27/10;H01L27/108 主分类号 G11C11/407
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