| 摘要 |
PURPOSE:To simplify the manufacturing process for memory cells and to conduct their write and erase freely, concerning a semiconductor having freely writable or erasable memory cells and its writing and erasing method. CONSTITUTION:Concerning a memory cell having a gate electrode 4 formed through a gate insulating film 3 on one-conductivity type semiconductor layer 1 interposed between opposite-conductivity type layers 5 and 6, memory erase is done by irradiating the joined part of an electrode 9 with elastic waves, connected to one of the opposite-conductivity type layers 5 and 6, and memory write is done by causing current of threshold value or more to flow into the electrode 9. |
