| 摘要 |
<p>PURPOSE:To provide a method of manufacturing a semiconductor device, which can use a desired metal for a barrier metal layer and offer high through-put. CONSTITUTION:A semiconductor substrate 1 is provided with bonding pads 3 covered with an insulating film 2. A conductive layer 4, for use in a later electrodeposition, is formed on the substrate, and an insulating film 5 is formed. A photoresist having holes above the bonding pads is applied, and it is used as an etching mask to remove the insulating film in the areas corresponding to the holes. Then, a barrier metal layer 27 is formed by a lift-off technique. When solder is applied by electrodeposition, the bonding pads are selectively plated since the other areas are covered with the insulating film. The solder plating 8 is used as a mask to selectively etch the insulating film 5 and the conductive layer 4. Finally, protruding electrodes are formed by a reflow of the solder 8. According to this method, a desired metal can be used for the barrier metal, and throughput is also improved.</p> |
