| 摘要 |
<p>PURPOSE:To simplify a bump electrode forming process to improve the manufacturing efficiency and form bump electrodes having required heights free from the height variation. CONSTITUTION:After adhesion and diffusion barrier metal layers 25 and 26 are selectively formed on a plurality of electrode pads 23 formed on the main surface of a semiconductor substrate 21, a bump metal layer 28 is applied to the whole main surface of the semiconductor substrate 21. The bump metal layer 28 is melted by a thermal treatment and approximately semi-spherical bump electrodes 29 are formed on the metal layers 25 and 26 by the surface tension of the bump metal. After that, melted metal layer 28 remnants 29a remaining on a passivation film 22 are removed.</p> |
