| 摘要 |
<p>PURPOSE:To prevent exponential distribution of intensity of reflected X-ray generated in an edge part of a mask pattern and to enable accurate and clear transcription of the mask pattern in a reflection type X-ray exposure mask. CONSTITUTION:In a reflection type X-ray mask wherein a desired mask pattern is formed which consists of a multilayer film 1 which reflects X-ray on a substrate 2 composed of a substance which does not reflect X-ray, at least a part of an edge face of a periphery of a pattern of the multilayer film 1 forms a slant along a projection angle direction in a reflection surface of X-ray in the mask.</p> |
