发明名称 METHOD OF CORRECTING MISALIGNMENT OF SEMICONDUCTOR WAFER AND PROJECTION ALIGNER
摘要 PURPOSE:To provide a projection aligner with which the discrepancy between the pattern and the resist on a semiconductor wafer can be corrected. CONSTITUTION:Only the resist region, which requires the correction of the discrepancy between a pattern 1 and a resist 2, is heated up and the resist 2 is refludized. Accordingly, a heating device, with which a laser beam can be made to irradiate (3) in a spot-like manner, is incorporated into a projection aligner. The discrepancy between the pattern and the resist can be corrected by refludizing the resist.
申请公布号 JPH04346413(A) 申请公布日期 1992.12.02
申请号 JP19910119917 申请日期 1991.05.24
申请人 HITACHI LTD 发明人 HIRANUMA MASAYUKI
分类号 H01L21/30;H01L21/027 主分类号 H01L21/30
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